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2sj670.pdf Principales características:

2sj6702sj670

Ordering number EN8354A 2SJ670 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ670 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --1.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% --6 A Mounted on a ceramic board (600mm2 0.8mm) 1.5 W Allowable Power Dissipation PD Tc=25 C 3.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 V Zero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0V --1 A

 

Keywords - ALL TRANSISTORS. Principales características

 2sj670.pdf Design, MOSFET, Power

 2sj670.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj670.pdf Database, Innovation, IC, Electricity

 

 
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