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2sk2403.pdf Principales características:

2sk24032sk2403

Ordering number EN8602 2SK2403 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK2403 Applications Features Built-in FRD. 10V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 450 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 3 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 12 A 1.65 W Allowable Power Dissipation PD Tc=25 C50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 450 V Zero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0V 1.0 mA Gate-to-Source Leakage Current IGSS VGS= 30V, VDS=0V 100 nA Cutoff Voltage VGS(off) VDS

 

Keywords - ALL TRANSISTORS. Principales características

 2sk2403.pdf Design, MOSFET, Power

 2sk2403.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk2403.pdf Database, Innovation, IC, Electricity

 

 

 


 
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