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atp602.pdf Principales características:

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ATP602 Ordering number ENA1543 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP602 Applications Features High-speed switching. 10V drive. Avalanche resistance guarantee. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 15 A Allowable Power Dissipation PD Tc=25 C70 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 74 mJ Avalanche Current *2 IAV 5 A Note *1 VDD=99V, L=5mH, IAV=5A *2 L 5mH, Single pulse at Ta=25 C Electrical Characteristics Ratings Parameter Symbol Conditions Unit min typ max Drain-to-S

 

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 atp602.pdf Design, MOSFET, Power

 atp602.pdf RoHS Compliant, Service, Triacs, Semiconductor

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