cph6003a.pdf Principales características:
Ordering number ENA1078 CPH6003A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-frequency Medium-power Amplifier CPH6003A Applications Features High gain (fT=7GHz typ). High Current (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 150 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2 0.8mm) 800 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 A Emitter Cutoff Curren
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