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ECH8410 Ordering number ENA1331 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8410 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 12 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 60 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 0.8mm) 1.6 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 A Gate-to-Source Leakage C

 

Keywords - ALL TRANSISTORS. Principales características

 ech8410.pdf Design, MOSFET, Power

 ech8410.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ech8410.pdf Database, Innovation, IC, Electricity

 

 
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