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2n4910x 2n4911x 2n4912x.pdf Principales características:

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS SCREENING OPTIONS AVAILABE 1 2 TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO 66 Metal Package. PIN 1 = BASE PIN 2 = EMITTER CASE = COLLECTOR ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) 2N4910X 2N4911X 2N4912X V(BR)CBO Collector Base Breakdown Voltage 40V 60V 80V V(BR)CEO Collector Emitter Breakdown Voltage 40V 60V 80V V(BR)EBO Emitter Base Breakdown Voltage 5V IC Continuous Collector Current 4A IB Base Current 1A PD Total Power Dissipation 25W TC Operating Case Temperature Range 65 to +200 C Tstg Storage Temperature Range 65 to +200 C R JC The

Keywords - ALL TRANSISTORS. Principales características

 2n4910x 2n4911x 2n4912x.pdf Design, MOSFET, Power

 2n4910x 2n4911x 2n4912x.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n4910x 2n4911x 2n4912x.pdf Database, Innovation, IC, Electricity