buz102.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

buz102.pdf Principales características:

BUZ 102 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175 C operating temperature also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 102 50 V 42 A 0.023 TO-220 AB C67078-S1351-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 111 C 42 Pulsed drain current IDpuls TC = 25 C 168 Avalanche energy, single pulse EAS mJ ID = 42 A, VDD = 25 V, RGS = 25 L = 102 H, Tj = 25 C 180 Reverse diode dv/dt dv/dt kV/ s IS = 42 A, VDS = 40 V, diF/dt = 200 A/ s Tjmax = 175 C 6 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 200 Operating temperature Tj -55 ... + 175 C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC 0.83 K/W Thermal resistanc