buz104.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

buz104.pdf Principales características:

BUZ 104 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175 C operating temperature also in TO-220 SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 104 50 V 17.5 A 0.1 TO-220 AB C67078-S1353-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 17.5 Pulsed drain current IDpuls TC = 25 C 70 Avalanche energy, single pulse EAS mJ ID = 17.5 A, VDD = 25 V, RGS = 25 L = 114 H, Tj = 25 C 35 Reverse diode dv/dt dv/dt kV/ s IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/ s Tjmax = 175 C 6 Gate source voltage VGS 20 V Power dissipation Ptot W TC = 25 C 60 Operating temperature Tj -55 ... + 175 C Storage temperature Tstg -55 ... + 175 Thermal resistance, chip case RthJC 2.5 K/W Thermal resistan