2n6107 2n6111.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n6107 2n6111.pdf Principales características:

2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N6107 2N6111 VCBO Collector-Base Voltage (IE = 0) 80 40 V VCEX 80 40 V Collector-Emitter Voltage (RBE = 100 ) V Collector-Emitter Voltage (I = 0) 70 30 V CEO B VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 7 A C IB Base Current 3 A P Total Dissipation at T = 25 oC40 W tot c o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j For PNP devices