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2sc4207.pdf Principales características:

2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications Unit mm Small package (dual type) High voltage and high current VCEO = 50 V, IC = 150 mA (max) High hFE hFE = 120 700 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618 Absolute Maximum Ratings (Ta = 25 C) (Q1, Q2 common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA PC JEDEC Collector power dissipation 300 mW (Note 1) JEITA Junction temperature Tj 125 C TOSHIBA 2-3L1A Storage temperature range Tstg -55 125 C Weight 0.014 g (typ.) Note Using continuously under heavy loads (e.g. the application of

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