2sc4321.pdf Principales características:
2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55 125 C JEDEC JEITA SC-70 TOSHIBA 2-2E1A Weight 0.006 g (typ.) Microwave Characteristics (Ta = = 25 C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 GHz S21e 2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 Insertion gain dB S21e 2 (2) V
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