2sj438.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sj438.pdf Principales características:

2SJ438 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ438 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.16 (typ.) DS (ON) High forward transfer admittance Y = 4.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-mode V = -0.8 -2.0 V (V = -10 V, I = -1 mA) th DS D Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Drain-gate voltage (RGS = 20 k ) VDGR -60 V Gate-source voltage VGSS 20 V DC (Note 1) ID -5 A Drain current Pulse (Note 1) IDP -20 A JEDEC Drain power dissipation (Tc = 25 C) PD 25 W JEITA SC-67 Single pulse avalanche energy EAS 273 mJ (Note 2) TOSHIBA 2-10R1B Avalanche current IAR -5 A Weight 1.9 g (typ.) Repetitive