2sj516.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sj516.pdf Principales características:

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ516 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.6 (typ.) High forward transfer admittance Y = 5.3 S (typ.) fs Low leakage current I = -100 A (max) (V = -250 V) DSS DS Enhancement-mode Vth = -1.5 -3.5 V (V = -10 V, I = -1 mA) DS D Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -250 V Drain-gate voltage (RGS = 20 k ) VDGR -250 V Gate-source voltage VGSS 20 V DC (Note 1) ID -6.5 A Drain current Pulse (Note 1) IDP -13 A Drain power dissipation (Tc = 25 C) PD 35 W Single pulse avalanche energy EAS 157 mJ JEDEC (Note 2) Avalanche current IAR -6.5 A JEITA SC-67 Repetitive avalenche energy (Note 3) EAR 3.5 mJ TOSHIBA 2-10R1