2sj599.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sj599.pdf Principales características:

SMD Type SMD Type SMD Type SMD Type Product specification 2SJ599 Features TO-252 Low on-resistance Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on)1 =75m MAX. (VGS =-10 V, ID =-10A) 5.30+0.2 0.50+0.8 -0.2 -0.7 RDS(on)2 = 110 m MAX. (VGS =-4.0V, ID =-10 A) Low Ciss Ciss = 1300 pF TYP. Built-in gate protection diode 0.127 0.80+0.1 max -0.1 1Gate +0.1 2.3 0.60-0.1 2Drain 4.60+0.15 -0.15 3Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Draintosourcevoltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current (DC) ID 20 A Drain current(pulse) * ID 50 A Power dissipation TC=25 PD 35 W TA=25 PD 1.0 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s, duty cycle 1% http //www.twtysemi.com sales@twtysemi.com 1 of 2 4008-318-123 +0.15 1.50 -0.15 3 .8 0 +0.2 5.55 +0.15 9.70 -0.2 0.50 -0.15 +0.