p057aat.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

p057aat.pdf Principales características:

P057AAT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 5.8m @VGS = 10V 129A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 129 ID Continuous Drain Current1 TC = 100 C 82 A IDM 410 Pulsed Drain Current2 IAS Avalanche Current 60 EAS Avalanche Energy L = 0.3mH 557 mJ TC = 25 C 192 PD Power Dissipation W TC = 100 C 77 TJ, TSTG Operating Junction & Storage Temperature Range -55 to 150 C TL 275 Lead Temperature (1/16" from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 0.65 C / W Junction-to-Ambient RqJA 63 1 Limited by package. 2 Pulse width limited by maximum junction temperature. Ver 1.0 1 2012/4/16 P057AAT N-Chan