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irfibf20g sihfibf20g.pdf Principales características:

IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 8.0 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 4.7 Low Thermal Resistance Qgd (nC) 21 Lead (Pb)-free Available Configuration Single DESCRIPTION D Third generation Power MOSFETs from Vishay provide the TO-220 FULLPAK designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional G insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100

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 irfibf20g sihfibf20g.pdf Design, MOSFET, Power

 irfibf20g sihfibf20g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfibf20g sihfibf20g.pdf Database, Innovation, IC, Electricity