irfz48r sihfz48r.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

irfz48r sihfz48r.pdf Principales características:

IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 60 Available Ultra Low On-Resistance RDS(on) ( )VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS* COMPLIANT Qg (Max.) (nC) 110 175 C Operating Temperature Fast Switching Qgs (nC) 29 Fully Avalanche Rated Qgd (nC) 36 Drop in Replacement of the SiHFZ48 for Linear/Audio Configuration Single Applications D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with G the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer S with an extremely efficient and reliable device for use in a D G S wide variety of ap