si7846dp.pdf Principales características:
Si7846DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.050 at VGS = 10 V 6.7 150 TrenchFET Power MOSFETS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Tested PowerPAK SO-8 APPLICATIONS Primary Side Switch for High Density DC/DC Telecom/Server 48 V DC/DC S 6.15 mm 5.15 mm 1 S Industrial and 42 V Automotive 2 S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information Si7846DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7846DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 150 V Gate-Source V
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