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mpsa92.pdf Principales características:

MPSA92 High-Voltage PNP Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -305 Vdc Collector-Base Voltage VCBO -310 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) V(BR)CEO -305 Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -310 - Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - ICBO uAdc -0.25 Collector Cutoff Current (V = -200 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= -5.0V c, I =0) -0.1 uAdc C WEITRON

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