2sc1316.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1316DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 750 VCBOV Collector-Emitter Voltage 750 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 2 ACCollector Power DissipationP 23 WC@ T =25CT Junction Temperature -65~200 JT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 7.6 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconduct