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2sc13162sc1316

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1316DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in lined-operated color TV chroma outputcircuits and sound output circuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 750 VCBOV Collector-Emitter Voltage 750 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 2 ACCollector Power DissipationP 23 WC@ T =25CT Junction Temperature -65~200 JT Storage Temperature Range -65~200 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 7.6 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconduct

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2sc1316.pdf Проектирование, MOSFET, Мощность

 2sc1316.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc1316.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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