cmut5551.pdf datasheet:

CMUT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 55CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 180 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6.0 VContinuous Collector Current IC 600 mAPower Dissipation PD 250 mWOperating and Storage Junction Temperature TJ, Tstg -65 to +150 CThermal Resistance JA 500 C/WELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)SYMBOL TEST CONDITIONS MIN MAX UNITSICBO VCB=120V 50 nAICBO VCB=120V, TA=100C 50 ABVCBO IC=100A 180 VBVCEO IC=1.0mA 160 VBVEBO IE=10A 6.0 VVCE(SAT) IC=10mA, IB=1