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CMUT5551www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.MARKING CODE: 55CSOT-523 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 180 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6.0 VContinuous Collector Current IC 600 mAPower Dissipation PD 250 mWOperating and Storage Junction Temperature TJ, Tstg -65 to +150 CThermal Resistance JA 500 C/WELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)SYMBOL TEST CONDITIONS MIN MAX UNITSICBO VCB=120V 50 nAICBO VCB=120V, TA=100C 50 ABVCBO IC=100A 180 VBVCEO IC=1.0mA 160 VBVEBO IE=10A 6.0 VVCE(SAT) IC=10mA, IB=1

 

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 cmut5551.pdf Проектирование, MOSFET, Мощность

 cmut5551.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 cmut5551.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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