2SB433F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB433F
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 56 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 40 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO36
Búsqueda de reemplazo de transistor bipolar 2SB433F
2SB433F Datasheet (PDF)
2sb435.pdf
2SB435 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc
2sb434.pdf
isc Silicon PNP Power Transistor 2SB434DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.2V(Max.) @I = -3ACE(sat) CComplement to Type 2SD234Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
2sb435.pdf
isc Silicon PNP Power Transistor 2SB435DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -1ACE(sat) CComplement to Type 2SD235Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
