2SB434Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB434Y

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO220

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2SB434Y datasheet

 8.1. Size:196K  inchange semiconductor
 2sb434.pdf pdf_icon

2SB434Y

isc Silicon PNP Power Transistor 2SB434 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.2V(Max.) @I = -3A CE(sat) C Complement to Type 2SD234 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 9.1. Size:69K  wingshing
 2sb435.pdf pdf_icon

2SB434Y

2SB435 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD235 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W Junc

 9.2. Size:211K  inchange semiconductor
 2sb435.pdf pdf_icon

2SB434Y

isc Silicon PNP Power Transistor 2SB435 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -50V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -1A CE(sat) C Complement to Type 2SD235 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

Otros transistores... 2SB431, 2SB432, 2SB433, 2SB433F, 2SB434, 2SB434G, 2SB434O, 2SB434R, TIP41, 2SB435, 2SB435G, 2SB435O, 2SB435R, 2SB435Y, 2SB436, 2SB437, 2SB438