2SB50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB50
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.14 W
Tensión colector-base (Vcb): 16 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 65 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1.5 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 130
Encapsulados: TO5
Búsqueda de reemplazo de 2SB50
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2SB50 datasheet
0.5. Size:161K jmnic
2sb509.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE
0.6. Size:158K jmnic
2sb507.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base
0.7. Size:236K lge
2sb507.pdf
2SB507(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40 320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base V
0.8. Size:215K inchange semiconductor
2sb503.pdf
isc Silicon PNP Power Transistors 2SB503 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
0.9. Size:193K inchange semiconductor
2sb508.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB508 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD314 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W
0.10. Size:215K inchange semiconductor
2sb502.pdf
isc Silicon PNP Power Transistors 2SB502 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
0.11. Size:129K inchange semiconductor
2sb509.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER
0.12. Size:179K inchange semiconductor
2sb506.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB506 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifi
0.13. Size:221K inchange semiconductor
2sb507.pdf
isc Silicon PNP Power Transistor 2SB507 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -2.0A CE(sat) C Complement to Type 2SD313 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplif
Otros transistores... 2SB493, 2SB493W, 2SB494, 2SB495, 2SB495A, 2SB496, 2SB497, 2SB498, BC337, 2SB502, 2SB502A, 2SB503, 2SB503A, 2SB504, 2SB504A, 2SB505, 2SB506
