2SB50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB50
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.14 W
   Tensión colector-base (Vcb): 16 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 65 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1.5 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 130
   Paquete / Cubierta: TO5

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2SB50 Datasheet (PDF)

0.1. Size:56K toshiba
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0.4. Size:25K no
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0.5. Size:161K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE

0.6. Size:158K jmnic
2sb507.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB507 DESCRIPTION With TO-220C package Complement to type 2SD313 Low collector saturation voltage APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Base

0.7. Size:236K lge
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2SB507(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base V

0.8. Size:215K inchange semiconductor
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isc Silicon PNP Power Transistors 2SB503DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

0.9. Size:193K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB508DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD314Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W

0.10. Size:215K inchange semiconductor
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isc Silicon PNP Power Transistors 2SB502DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier and regulatorapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

0.11. Size:129K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION With TO-66 package Complement to type 2SD315 APPLICATIONS For use in audio frequency power amplifier application PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER

0.12. Size:179K inchange semiconductor
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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB506DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifi

0.13. Size:221K inchange semiconductor
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isc Silicon PNP Power Transistor 2SB507DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -2.0ACE(sat) CComplement to Type 2SD313Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for the output stage of 15W to 25W AF poweramplif

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