2SB514C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB514C
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220

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2SB514C Datasheet (PDF)

8.1. Size:740K sanyo
2sb514.pdf

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8.2. Size:165K jmnic
2sb514.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbso

8.3. Size:123K inchange semiconductor
2sb514.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB514 DESCRIPTION With TO-220C package Complement to type 2SD330 Low collector saturation voltage APPLICATIONS Suited for use in output stage of 10W AF power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: MJE13003I6 | UMX4N | KSD560Y

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050