2SB520-1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB520-1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 130 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO3

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2SB520-1 datasheet

 8.1. Size:178K  inchange semiconductor
 2sb520.pdf pdf_icon

2SB520-1

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB520 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -7A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

 9.1. Size:183K  inchange semiconductor
 2sb521.pdf pdf_icon

2SB520-1

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB521 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

 9.2. Size:167K  inchange semiconductor
 2sb522.pdf pdf_icon

2SB520-1

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB522 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

 9.3. Size:217K  inchange semiconductor
 2sb526.pdf pdf_icon

2SB520-1

isc Silicon PNP Power Transistor 2SB526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

MOSTRAR MÁS

Otros transistores... 2SB518, 2SB518-1, 2SB518-2, 2SB519, 2SB519-1, 2SB519-2, 2SB52, 2SB520, 13005, 2SB520-2, 2SB521, 2SB521-1, 2SB521-2, 2SB522, 2SB522-1, 2SB522-2, 2SB523