2SB520-2 Todos los transistores

 

2SB520-2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB520-2
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 140 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO3
 

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2SB520-2 Datasheet (PDF)

 8.1. Size:178K  inchange semiconductor
 2sb520.pdf pdf_icon

2SB520-2

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB520DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -7ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 9.1. Size:183K  inchange semiconductor
 2sb521.pdf pdf_icon

2SB520-2

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB521DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.2. Size:167K  inchange semiconductor
 2sb522.pdf pdf_icon

2SB520-2

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB522DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.3. Size:217K  inchange semiconductor
 2sb526.pdf pdf_icon

2SB520-2

isc Silicon PNP Power Transistor 2SB526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

MOSTRAR MÁS

Otros transistores... 2SB518-1 , 2SB518-2 , 2SB519 , 2SB519-1 , 2SB519-2 , 2SB52 , 2SB520 , 2SB520-1 , BC556 , 2SB521 , 2SB521-1 , 2SB521-2 , 2SB522 , 2SB522-1 , 2SB522-2 , 2SB523 , 2SB524 .

History: TRR50-12 | 2SB519 | BUP58

 

 
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