2SB522-1 Todos los transistores

 

2SB522-1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB522-1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 43 W
   Tensión colector-base (Vcb): 70 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3.5 MHz
   Ganancia de corriente contínua (hfe): 45
   Paquete / Cubierta: TO220
 

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2SB522-1 Datasheet (PDF)

 8.1. Size:167K  inchange semiconductor
 2sb522.pdf pdf_icon

2SB522-1

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB522DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.1. Size:183K  inchange semiconductor
 2sb521.pdf pdf_icon

2SB522-1

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB521DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

 9.2. Size:217K  inchange semiconductor
 2sb526.pdf pdf_icon

2SB522-1

isc Silicon PNP Power Transistor 2SB526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 9.3. Size:178K  inchange semiconductor
 2sb520.pdf pdf_icon

2SB522-1

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB520DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -7ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

MOSTRAR MÁS

Otros transistores... 2SB52 , 2SB520 , 2SB520-1 , 2SB520-2 , 2SB521 , 2SB521-1 , 2SB521-2 , 2SB522 , NJW0281G , 2SB522-2 , 2SB523 , 2SB524 , 2SB525 , 2SB526 , 2SB527 , 2SB528 , 2SB529 .

History: NPS3906 | IT138-71 | ST414

 

 
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