2SB523 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB523

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 130 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 35 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO126

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2SB523 datasheet

 9.1. Size:183K  inchange semiconductor
 2sb521.pdf pdf_icon

2SB523

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB521 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

 9.2. Size:167K  inchange semiconductor
 2sb522.pdf pdf_icon

2SB523

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB522 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -0.4V(Max.) @I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATI

 9.3. Size:217K  inchange semiconductor
 2sb526.pdf pdf_icon

2SB523

isc Silicon PNP Power Transistor 2SB526 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD356 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 9.4. Size:178K  inchange semiconductor
 2sb520.pdf pdf_icon

2SB523

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB520 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -140V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -7A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

MOSTRAR MÁS

Otros transistores... 2SB520-1, 2SB520-2, 2SB521, 2SB521-1, 2SB521-2, 2SB522, 2SB522-1, 2SB522-2, TIP2955, 2SB524, 2SB525, 2SB526, 2SB527, 2SB528, 2SB529, 2SB53, 2SB530