2SB523 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB523
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 130 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 35 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO126

Búsqueda de reemplazo de transistor bipolar 2SB523

2SB523 Datasheet (PDF)

9.1. Size:183K inchange semiconductor
2sb521.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB521DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

9.2. Size:167K inchange semiconductor
2sb522.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB522DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -0.4V(Max.) @I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATI

9.3. Size:217K inchange semiconductor
2sb526.pdf

isc Silicon PNP Power Transistor 2SB526DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD356Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF high power dirver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.4. Size:178K inchange semiconductor
2sb520.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB520DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -140V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -7ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUW133A | 2N5118

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050