2SB532
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB532
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5
MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SB532
2SB532
Datasheet (PDF)
..1. Size:207K inchange semiconductor
2sb532.pdf 
isc Silicon PNP Power Transistors 2SB532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh Power Dissipation-: P = 60W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
9.2. Size:158K jmnic
2sb536.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseA
9.3. Size:163K inchange semiconductor
2sb538.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB538DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -65V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0V(Max.) @I = -10ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier application
9.4. Size:213K inchange semiconductor
2sb539.pdf
isc Silicon PNP Power Transistors 2SB539DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD287Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.Recommended for 70~80W
9.5. Size:204K inchange semiconductor
2sb536.pdf
isc Silicon PNP Power Transistors 2SB536DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SD381Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed switching.Suitable for driver of 60~100 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25
9.6. Size:212K inchange semiconductor
2sb531.pdf
isc Silicon PNP Power Transistors 2SB531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power Dissipation-: P = 50W(Max)@T =25C CComplement to Type 2SD371Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
9.7. Size:162K inchange semiconductor
2sb530.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB530DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
9.8. Size:189K inchange semiconductor
2sb537.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB537DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -2.0(Max.) @I = -1ACE(sat) CComplement to Type 2SD382Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier, low speed
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
