2SB548 Todos los transistores

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for audio amplifier drivers with 30 W to 50 W output High voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators ABSOLUTE MAXIMUM RATINGS (Ta = 25

JMnic Product Specification Silicon PNP Power Transistors 2SB548 DESCRIPTION With TO-126 package Complement to type 2SD414 APPLICATIONS Designed for use in driver and output stages of audio frequency amplifiers PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Complement to Type 2SD414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

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JMnic Product Specification Silicon PNP Power Transistors 2SB546A DESCRIPTION With TO-220C package Complement to type 2SD401A Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simpli

JMnic Product Specification Silicon PNP Power Transistors 2SB546 DESCRIPTION With TO-220C package Complement to type 2SD401 Collector current IC=-2A Collector-base voltage VCBO=-200V APPLICATIONS For use in general purpose power amplifier,vertical output application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplifi

isc Silicon PNP Power Transistor 2SB546A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complement

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB547 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD402 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical def

isc Silicon PNP Power Transistors 2SB541 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. Suitable for output sta

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB549 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO With TO-126 package Complement to Type 2SD415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon PNP Power Transistor 2SB546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Collector Power Dissipation- P = 30W(Max)@ T = 25 C C Complement to Type 2SD401 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV vertical deflection of complementar