2SB56 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB56
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.5 MHz
Capacitancia de salida (Cc): 70 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO1
Búsqueda de reemplazo de 2SB56
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2SB56 datasheet
0.1. Size:214K mcc
2sb562-b.pdf 
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability
0.2. Size:214K mcc
2sb562-c.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability
0.3. Size:244K utc
2sb562.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box 2SB562L-x-T92-K 2SB562G-x-T92-K TO-92
0.4. Size:30K hitachi
2sb562.pdf
2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 1
0.5. Size:33K hitachi
2sb566.pdf
2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage V
0.6. Size:35K hitachi
2sb561.pdf
2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base vo
0.7. Size:77K secos
2sb561.pdf
2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G H Emitter Collector Base J A D Millimeter REF. CLASSIFICATION OF hFE Min. Max. A 4.40 4.70 B B 4.30 4.70 Product-Rank 2SB561-B 2SB561-C C 12.70 -
0.8. Size:257K jmnic
2sb566 2sb566a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin
0.10. Size:243K lge
2sb560 to-92mod.pdf
2SB560 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE Features High reverse voltage 5.800 6.200 Low saturation voltage Suitable universal AF power amplifier use 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Value Units 0.400 0.600 VCBO Collector-Base Voltage -100 V 13.800 14.200 VC
0.11. Size:218K inchange semiconductor
2sb565.pdf
isc Silicon PNP Power Transistor 2SB565 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATI
0.12. Size:189K inchange semiconductor
2sb568.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB568 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -2.0(Max.) @I = -0.5A CE(sat) C Complement to Type 2SD478 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output
0.13. Size:150K inchange semiconductor
2sb566 2sb566a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol
0.14. Size:218K inchange semiconductor
2sb566.pdf
isc Silicon PNP Power Transistor 2SB566 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Complement to Type 2SD476 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applica
0.15. Size:188K inchange semiconductor
2sb567.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB567 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -2.0(Max.) @I = -0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIM
0.16. Size:208K inchange semiconductor
2sb563.pdf
isc Silicon PNP Power Transistor 2SB563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3A CE(sat) C Complement to Type 2SD297 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSO
0.17. Size:150K inchange semiconductor
2sb566-a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol
Otros transistores... 2SB556, 2SB557, 2SB557S, 2SB558, 2SB559, 2SB559D, 2SB559E, 2SB559F, TIP31C, 2SB560, 2SB560D, 2SB560E, 2SB560F, 2SB560G, 2SB560MP, 2SB561, 2SB562
