2SB563 Todos los transistores

isc Silicon PNP Power Transistor 2SB563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3A CE(sat) C Complement to Type 2SD297 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSO

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2SB562 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier. PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material Molded Plastic. UL Flammability

UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92 * Low frequency power amplifier * Complement to 2SD468 1 TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box 2SB562L-x-T92-K 2SB562G-x-T92-K TO-92

2SB562 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD468 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB562 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 1

2SB566(K), 2SB566A(K) Silicon PNP Triple Diffused Application Low frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K) Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB566(K) 2SB566A(K) Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage V

2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 Application Low frequency power amplifier Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base vo

2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G H Emitter Collector Base J A D Millimeter REF. CLASSIFICATION OF hFE Min. Max. A 4.40 4.70 B B 4.30 4.70 Product-Rank 2SB561-B 2SB561-C C 12.70 -

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

2SB560 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE Features High reverse voltage 5.800 6.200 Low saturation voltage Suitable universal AF power amplifier use 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 Symbol Parameter Value Units 0.400 0.600 VCBO Collector-Base Voltage -100 V 13.800 14.200 VC

isc Silicon PNP Power Transistor 2SB565 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATI

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB568 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -2.0(Max.) @I = -0.5A CE(sat) C Complement to Type 2SD478 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol

isc Silicon PNP Power Transistor 2SB566 DESCRIPTION Low Collector Saturation Voltage V = -1.0(V)(Max)@I = -2A CE(sat) C Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Complement to Type 2SD476 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier and power switching applica

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB567 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -2.0(Max.) @I = -0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absol