2SB567 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB567DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIM

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB562Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Frequency Power Amplifier.PNP Epitaxial Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Silicon Transistor Case Material: Molded Plastic. UL Flammability

UNISONIC TECHNOLOGIES CO., LTD 2SB562 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER 1 FEATURES TO-92* Low frequency power amplifier * Complement to 2SD468 1TO-92NL ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB562L-x-T92-B 2SB562G-x-T92-B TO-92 E C B Tape Box2SB562L-x-T92-K 2SB562G-x-T92-K TO-92

2SB562Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD468OutlineTO-92MOD1. Emitter2. Collector3. Base3212SB562Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5 VCollector current IC 1

2SB566(K), 2SB566A(K)Silicon PNP Triple DiffusedApplicationLow frequency power amplifier power switching complementary pair with 2SD476(K) and 2SD476A(K)OutlineTO-220AB1. Base2. Collector(Flange)13. Emitter23Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB566(K) 2SB566A(K) UnitCollector to base voltage VCBO 70 70 VCollector to emitter voltage V

2SB561Silicon PNP EpitaxialADE-208-1023 (Z)1st. EditionMar. 2001Application Low frequency power amplifier Complementary pair with 2SD467OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB561Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base vo

2SB561 -0.7A , -25V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Frequency Power Amplifier G HEmitterCollectorBase JA DMillimeter REF. CLASSIFICATION OF hFE Min. Max.A 4.40 4.70BB 4.30 4.70Product-Rank 2SB561-B 2SB561-CC 12.70 -

JMnic Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

2SB560 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 12. COLLECTOR 2 3 3. BASE Features High reverse voltage 5.8006.200Low saturation voltage Suitable universal AF power amplifier use 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.100Symbol Parameter Value Units0.4000.600VCBO Collector-Base Voltage -100 V 13.80014.200VC

isc Silicon PNP Power Transistor 2SB565DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE MAXIMUM RATI

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB568DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CComplement to Type 2SD478Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol

isc Silicon PNP Power Transistor 2SB566DESCRIPTIONLow Collector Saturation Voltage:V = -1.0(V)(Max)@I = -2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOComplement to Type 2SD476Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applica

isc Silicon PNP Power Transistor 2SB563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3ACE(sat) CComplement to Type 2SD297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSO

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB566 2SB566A DESCRIPTION With TO-220C package Complement to type 2SD476/476A APPLICATIONS For low frequency power amplifier power switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsol