2SB601 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB601
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 7000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SB601
2SB601 Datasheet (PDF)
2sb601.pdf
DATA SHEETSILICON POWER TRANSISTOR2SB601PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High-DC current gain due to Darlington connection Low collector saturation voltage Low collector cutoff current Ideal for use in direct drive from IC output for magnet drivers s
2sb601.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB601 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=
2sb601.pdf
isc Silicon PNP Darlington Power Transistor 2SB601DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in
2sb600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION With TO-3 package High power dissipations Complement to type 2SD555 APPLICATIONS For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME
2sb604.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB604DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -70V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.5(Max.) @I = -4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicat
2sb609.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB609DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -80V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWide area of safe operationWith TO-66 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio fre
2sb600.pdf
isc Silicon PNP Power Transistors 2SB600DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOHigh Power Dissipation-: P = 200W(Max)@T =25C CComplement to Type 2SD555Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sb608.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB608DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -180V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -0.5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications .
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
