2SB616
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB616
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 5
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
MT-200
2SB616
Datasheet (PDF)
..1. Size:189K inchange semiconductor
2sb616.pdf 
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp
9.1. Size:178K inchange semiconductor
2sb611.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a
9.2. Size:207K inchange semiconductor
2sb613.pdf
isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio
9.3. Size:211K inchange semiconductor
2sb612.pdf
isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
