2SB616A Todos los transistores

 

2SB616A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB616A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: MT-200
 

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2SB616A Datasheet (PDF)

 8.1. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB616A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

 9.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB616A

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

 9.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB616A

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

 9.3. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB616A

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... 2SB61 , 2SB611 , 2SB611A , 2SB612 , 2SB612A , 2SB613 , 2SB615 , 2SB616 , A1015 , 2SB617 , 2SB617A , 2SB618 , 2SB618A , 2SB619 , 2SB62 , 2SB620 , 2SB621 .

History: ESM5008 | 2SA1013T

 

 
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