2SB617A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB617A

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 7 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: MT-200

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2SB617A datasheet

 9.1. Size:178K  inchange semiconductor
 2sb611.pdf pdf_icon

2SB617A

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB611 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -110V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a

 9.2. Size:207K  inchange semiconductor
 2sb613.pdf pdf_icon

2SB617A

isc Silicon PNP Power Transistors 2SB613 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -250V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C High Current Capability Complement to Type 2SD583 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching applicatio

 9.3. Size:189K  inchange semiconductor
 2sb616.pdf pdf_icon

2SB617A

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB616 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -100V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -1.0(Max.) @I = -2A CE(sat) C With TO-3PN package Complement to Type 2SD586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amp

 9.4. Size:211K  inchange semiconductor
 2sb612.pdf pdf_icon

2SB617A

isc Silicon PNP Power Transistors 2SB612 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO High Power Dissipation- P = 100W(Max)@T =25 C C Complement to Type 2SD582 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommended for 80 100W audio amplifier output stage. ABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... 2SB611A, 2SB612, 2SB612A, 2SB613, 2SB615, 2SB616, 2SB616A, 2SB617, BC337, 2SB618, 2SB618A, 2SB619, 2SB62, 2SB620, 2SB621, 2SB621A, 2SB622