2SB617A . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB617A Datasheet (PDF)

9.1. Size:178K inchange semiconductor
2sb611.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB611DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -110V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = -1.0V(Max.) @I = -5ACE(sat) CWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose switching a

9.2. Size:207K inchange semiconductor
2sb613.pdf pdf_icon

isc Silicon PNP Power Transistors 2SB613DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOHigh Power Dissipation-: P = 150W(Max)@T =25C CHigh Current CapabilityComplement to Type 2SD583Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applicatio

9.3. Size:189K inchange semiconductor
2sb616.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB616DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -100V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -1.0(Max.) @I = -2ACE(sat) CWith TO-3PN packageComplement to Type 2SD586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amp

9.4. Size:211K inchange semiconductor
2sb612.pdf pdf_icon

isc Silicon PNP Power Transistors 2SB612DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOHigh Power Dissipation-: P = 100W(Max)@T =25C CComplement to Type 2SD582Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommended for 80~100W audio amplifier output stage.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2SB611A , 2SB612 , 2SB612A , 2SB613 , 2SB615 , 2SB616 , 2SB616A , 2SB617 , D882 , 2SB618 , 2SB618A , 2SB619 , 2SB62 , 2SB620 , 2SB621 , 2SB621A , 2SB622 .