2SB621A Todos los transistores

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD592 and 2SD592A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SB621 30 VCBO V +0.2 +0.2 base voltage 2S... See More ⇒

Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD592 and 2SD592A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to 2SB621 30 VCBO V +0.2 +0.2 base voltage 2S... See More ⇒

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2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current Gain. hFE 200 (Typ.) (VCE= -1V, IC= -100mA) A Complimentary to 2SD596 L 3 3 Top View C B MARKING 1 1 2 Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 2 K E Ran... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB624 TRANSISTOR (PNP) FEATURES 1.BASE High DC current gain. hFE 200 TYP.(VCE=-1V,IC=-100mA) 2.EMITTER 3.COLLECTOR Complimentary to 2SD596. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Volt... See More ⇒

2SB624 TRANSISTOR(PNP) SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE 200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700... See More ⇒

2SB624 SOT-23-3L Transistor(PNP) 1.BASE SOT-23-3L 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC current gain. hFE 200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emi... See More ⇒

2SB624 SOT-23 Transistor(PNP) SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE 200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 ... See More ⇒

SMD Type Transistors PNP Transistors 2SB624 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 High DC current gain. hFE 200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 ... See More ⇒

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2SB624 TRANSI STOR (PNP) 2SB624 Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to 2SD596 High DC Current gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA Collector Power Diss... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Transistor 2SB624 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = -1V, I = -100mA CE C Complementary to 2SD596 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB626 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -6A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB625 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Low Collector Saturation Voltage- V = -1.0V(Max.) @I = -5A CE(sat) C Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching a... See More ⇒

isc Silicon PNP Power Transistor 2SB628 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Complement to Type 2SD608 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒