2SB624BV4
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB624BV4
Código: BV4
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80
MHz
Capacitancia de salida (Cc): 17
pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta:
TO236
Búsqueda de reemplazo de transistor bipolar 2SB624BV4
2SB624BV4
Datasheet (PDF)
8.2. Size:422K secos
2sb624.pdf 
2SB624 -0.7A , -30V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High DC Current Gain. hFE200 (Typ.) (VCE= -1V, IC= -100mA) A Complimentary to 2SD596 L33Top View C BMARKING 11 2Product-Rank 2SB624-BV1 2SB624-BV2 2SB624-BV3 2K ERan
8.3. Size:644K jiangsu
2sb624.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB624 TRANSISTOR (PNP)FEATURES1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)2.EMITTER3.COLLECTOR Complimentary to 2SD596.MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Volt
8.4. Size:821K htsemi
2sb624.pdf
2SB624 TRANSISTOR(PNP) SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -700
8.5. Size:334K lge
2sb624 sot-23-3l.pdf
2SB624 SOT-23-3L Transistor(PNP)1.BASE SOT-23-3L2.EMITTER 2.923.COLLECTOR 0.351.17Features2.80 1.60High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.151.90Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emi
8.6. Size:322K lge
2sb624 sot-23.pdf
2SB624 SOT-23 Transistor(PNP)SOT-231.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5
8.7. Size:354K kexin
2sb624.pdf
SMD Type TransistorsPNP Transistors2SB624SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30
8.9. Size:1574K cn yongyutai
2sb624.pdf
2SB624 TRANSI STOR (PNP)2SB624Equivalent Circuit: SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to 2SD596 High DC Current gainMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -30 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -700 mACollector Power Diss
8.10. Size:201K inchange semiconductor
2sb624.pdf
INCHANGE Semiconductorisc Silicon PNP Transistor 2SB624DESCRIPTIONSOT-23 plastic-encapsulate transistorsHigh DC current gain:h =200(TYP)FE@V = -1V, I = -100mACE CComplementary to 2SD596Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency general purpose amplifierABSOLUTE MAXIMUM RATINGS(T =2
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