2SB631F Todos los transistores

 

2SB631F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB631F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 8 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 55 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: TO126
 

 Búsqueda de reemplazo de 2SB631F

   - Selección ⓘ de transistores por parámetros

 

2SB631F Datasheet (PDF)

 8.1. Size:220K  jmnic
2sb631 2sb631k.pdf pdf_icon

2SB631F

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

 8.2. Size:358K  lzg
2sb631k 3ca631k.pdf pdf_icon

2SB631F

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme

 8.3. Size:200K  inchange semiconductor
2sb631.pdf pdf_icon

2SB631F

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB631DESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicati

 8.4. Size:178K  inchange semiconductor
2sb631 2sb631k.pdf pdf_icon

2SB631F

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2S30 | HM772 | KT343B | D26C3 | BU103AD | MJB41CG | ACY38

 

 
Back to Top

 


 
.