2SB631F Todos los transistores

 

2SB631F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB631F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 8 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 55 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: TO126
 

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2SB631F Datasheet (PDF)

 8.1. Size:220K  jmnic
 2sb631 2sb631k.pdf pdf_icon

2SB631F

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

 8.2. Size:358K  lzg
 2sb631k 3ca631k.pdf pdf_icon

2SB631F

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme

 8.3. Size:200K  inchange semiconductor
 2sb631.pdf pdf_icon

2SB631F

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB631DESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicati

 8.4. Size:178K  inchange semiconductor
 2sb631 2sb631k.pdf pdf_icon

2SB631F

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

MOSTRAR MÁS

Otros transistores... 2SB627 , 2SB628 , 2SB628A , 2SB63 , 2SB630 , 2SB631 , 2SB631D , 2SB631E , 2N2222A , 2SB631K , 2SB631KD , 2SB631KE , 2SB631KF , 2SB632 , 2SB632D , 2SB632E , 2SB632F .

 

 
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