2SB631K Todos los transistores

 ..1. Size:220K  jmnic
 2sb631 2sb631k.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

 ..2. Size:358K  lzg
 2sb631k 3ca631k.pdf

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier,medium speed switching applications . , 2SD600K(3DA600K) Features High V ,high current,low saturation voltage and good linearity of h compleme

 ..3. Size:178K  inchange semiconductor
 2sb631 2sb631k.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto

 ..4. Size:213K  inchange semiconductor
 2sb631k.pdf

isc Silicon PNP Power Transistor 2SB631K DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM

 8.1. Size:200K  inchange semiconductor
 2sb631.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION High Collector Current-I =-1.0A C High Collector-Emitter Breakdown Voltage- V =-100V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD600 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applicati

 8.2. Size:178K  inchange semiconductor
 2sb631-k.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO -100/-120V High current -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collecto

 9.1. Size:27K  sanyo
 2sb633p 2sd613p.pdf

Ordering number ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, unit mm high current 6A. 2010C AF 35 to 45W output. [2SB633P / 2SD613P] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter Spec

 9.2. Size:160K  sanyo
 2sb633.pdf

 9.3. Size:211K  jmnic
 2sb632 2sb632k.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute max

 9.4. Size:199K  jmnic
 2sb633.pdf

JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage VCEO=-85V High current IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Tc=2

 9.5. Size:219K  inchange semiconductor
 2sb630.pdf

isc Silicon PNP Power Transistor 2SB630 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Complement to Type 2SD610 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications. Suitable for driver of 200 300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.6. Size:212K  inchange semiconductor
 2sb634.pdf

isc Silicon PNP Power Transistor 2SB634 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 9.7. Size:171K  inchange semiconductor
 2sb632-k.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 B

 9.8. Size:218K  inchange semiconductor
 2sb633.pdf

isc Silicon PNP Power Transistor 2SB633 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -85V(Min) (BR)CEO Complement to Type 2SD613 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency 25 35 watts output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1

 9.9. Size:188K  inchange semiconductor
 2sb632.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB632 DESCRIPTION High Collector Current-I =-2.0A C High Collector-Emitter Breakdown Voltage- V =-25V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD612 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifier applications ABSOLUTE

 9.10. Size:184K  inchange semiconductor
 2sb638.pdf

INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2SB638 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- h =1000 (Min) @ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier a