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2SB637 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB637
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 2SB637

 

2SB637 Datasheet (PDF)

 9.1. Size:27K  sanyo
2sb633p 2sd613p.pdf

2SB637
2SB637

Ordering number : ENN66622SB633P/2SD613PPNP / NPN Epitaxial Planar Silicon Transistors2SB633P / 2SD613P85V / 6A, AF 35 to 45W Output ApplicationsFeaturesPackage Dimensions High breakdown voltage, VCEO 85V,unit : mmhigh current 6A.2010C AF 35 to 45W output.[2SB633P / 2SD613P]10.24.53.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSpec

 9.2. Size:160K  sanyo
2sb633.pdf

2SB637
2SB637

 9.3. Size:220K  jmnic
2sb631 2sb631k.pdf

2SB637
2SB637

JMnic Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

 9.4. Size:211K  jmnic
2sb632 2sb632k.pdf

2SB637
2SB637

JMnic Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute max

 9.5. Size:199K  jmnic
2sb633.pdf

2SB637
2SB637

JMnic Silicon PNP Power Transistors 2SB633 DESCRIPTION With TO-220C package Complement to type 2SD613 High breakdown voltage :VCEO=-85V High current :IC=-6A APPLICATIONS Recommend for 25-35W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Tc=2

 9.6. Size:358K  lzg
2sb631k 3ca631k.pdf

2SB637
2SB637

2SB631K(3CA631K) PNP /SILICON PNP TRANSISTOR : Purpose:Low frequency power amplifier,medium speed switching applications . :, 2SD600K(3DA600K) Features:High V ,high current,low saturation voltage and good linearity of h compleme

 9.7. Size:200K  inchange semiconductor
2sb631.pdf

2SB637
2SB637

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB631DESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-100V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicati

 9.8. Size:178K  inchange semiconductor
2sb631 2sb631k.pdf

2SB637
2SB637

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

 9.9. Size:178K  inchange semiconductor
2sb631-k.pdf

2SB637
2SB637

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collecto

 9.10. Size:213K  inchange semiconductor
2sb631k.pdf

2SB637
2SB637

isc Silicon PNP Power Transistor 2SB631KDESCRIPTIONHigh Collector Current-I =-1.0ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD600KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM

 9.11. Size:219K  inchange semiconductor
2sb630.pdf

2SB637
2SB637

isc Silicon PNP Power Transistor 2SB630DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOComplement to Type 2SD610Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applications.Suitable for driver of 200~300 watts audio amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aS

 9.12. Size:212K  inchange semiconductor
2sb634.pdf

2SB637
2SB637

isc Silicon PNP Power Transistor 2SB634DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt

 9.13. Size:171K  inchange semiconductor
2sb632-k.pdf

2SB637
2SB637

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB632 2SB632K DESCRIPTION With TO-126 package Complement to type 2SD612/612K High collector dissipation Wide ASO(Safe Operating Area) APPLICATIONS 25V/35V, 2A low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 B

 9.14. Size:218K  inchange semiconductor
2sb633.pdf

2SB637
2SB637

isc Silicon PNP Power Transistor 2SB633DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -85V(Min)(BR)CEOComplement to Type 2SD613Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency 25~35 watts output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -1

 9.15. Size:188K  inchange semiconductor
2sb632.pdf

2SB637
2SB637

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB632DESCRIPTIONHigh Collector Current-I =-2.0ACHigh Collector-Emitter Breakdown Voltage-: V =-25V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD612Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency power amplifier applicationsABSOLUTE

 9.16. Size:184K  inchange semiconductor
2sb638.pdf

2SB637
2SB637

INCHANGE Semiconductorisc Silicon PNP Darlingtion Power Transistor 2SB638DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h =1000 (Min) @ I = -5AFE CCollector-Emitter Sustaining Voltage-V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier a

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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