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Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter

Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2SB647L Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low Frequency Power Amplifier PNP Complementary Pair with 2SD667 Plastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Transistor Lead Free Finish/Rohs Complian

2SB647(A)-B MCC Micro Commercial Components TM 2SB647(A)-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB647-D Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Capable of 0.9Watts of Power Dissipation. Plastic-Encapsulate Collector-current -1.0A

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Unit mm Complementary to 2SD638 and 2SD639 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25 C) 0.85 Parameter Symbol Ratings Unit

Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Unit mm Complementary to 2SD638 and 2SD639 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. Absolute Maximum Ratings (Ta=25 C) 0.85 Parameter Symbol Ratings Unit

UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL APPLICATION * Low frequency power amplifier ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB647L-x-T9N-B 2SB647G-x-T9N-B TO-92NL E C B Tape Box 2SB647L-x-T9N-K 2SB647G-x-T9N-K TO-92NL E C B Bulk www.unisonic.com.tw 1 of 4

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v

2SB647, 2SB647A Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO 120 120 V Collector to emitter voltage VCEO 80 100 V Emitter to base volt

2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2 0.2 8.0 0.2 FEATURES 2.0 0.2 4.14 0.1 O2.8 0.1 O3.2 0.1 Power smplifier applications 11.0 0.2 1.4 0.1 1 2 3 Power dissipation PCM 1 W Tamb=25 1.27 0.1 Collector current 15.3

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO 92L 2SB647 TRANSISTOR (PNP) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SD667 Equivalent Circuit B647=Device code B647 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors J C T TO 92M TO 92MOD 2SB647/2SB647A TRANSISTOR (PNP) 1. COLLECTOR 1. EMITTER 2. BASE FEATURES 2. COLLECTOR Low Frequency Power Amplifier 3. EMITTER Complementary Pair with 2SD667/A 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Va

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t

JMnic Product Specification Silicon PNP Power Transistors 2SB645 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.500 7.400 2.900 1.100 Symbol Parameter Value Units 7.800 1.500 VCBO Collector-Base Voltage -180 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 3

2SB649/2SB649A TO-126C Transistor (PNP) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V 3.000 7.800 3.400 8.200 1.800 VCEO Collector-Emitter Voltage 2.200 4.040 2SB649 -120 V

2SB647 / 2SB647A PNP General Purpose Transistors 2 P b Lead(Pb)-Free 1 3 2 3 1.EMITTER 3.BASE 2.COLLECTOR 1 TO-92MOD MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage 80 VCEO V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1000 mA Total Device Dissipation PD 900 mW TA=25 C Tj C Junc

2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol 2SB649 2SB649A Unit VCBO -180 V Collector-Emitter Voltage VCEO -120 -160 V Collector-Base Voltage VEBO Emitter-Base Voltage 6.0 V Collector Current IC -1.5 A PD 1.0 W Power Disspation Tj +150 C Junction Temp

2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA) Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A) Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin

2SB647(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features 2SD667(A) Complementary pair with 2SD667(A). / Applications Low frequency power amplifier. / Equivalent Circuit / P

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80

2SB647(3CG647) 2SB647A(3CG647A) PNP /SILICON PNP TRANSISTOR , 2SD667(3DG667)/2SD667A(3DG667A) Purpose Low frequency power amplifier, complementary pair with 2SD667(3DG667) /2SD667A(3DG667A) /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO -120 V 2SB647 -80

2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR /Purpose Low frequency power amplifier. 2SD669(3DA669)/2SD669A(3DA669A) Features Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -180 V CBO

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB647 TRANSISTOR (PNP) SOT-89-3L FEATURE Power dissipation 1. BASE PCM 0.9 W (Tamb=25 ) 2. COLLECTOR 1 Collector current 2 ICM -1 A 3. EMITTER 3 Collector-base voltage V(BR)CBO 120 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELE

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME

isc Silicon PNP Power Transistors 2SB645 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO High Power Dissipation- P = 150W(Max)@T =25 C C Complement to Type 2SD665 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Recommended for 200W high-fidelity audi

isc Silicon PNP Power Transistor 2SB649 DESCRIPTION High Collector Current-I =-1.5A C High Collector-Emitter Breakdown Voltage- V =-120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RA