2SB649B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 11SOT-223 SOT-89 APPLICATIONS 1* Low frequency power amplifier complementary pair with UTC 12SD669/A TO-252 TO-9211TO-126TO-92NL11TO-126STO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

2SB649, 2SB649ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD669/AOutlineTO-126 MOD1. Emitter2. Collector3. Base1232SB649, 2SB649AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SB649 2SB649A UnitCollector to base voltage VCBO 180 180 VCollector to emitter voltage VCEO 120 160 VEmitter to base v

2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-126C3.20.28.00.2FEATURES 2.00.24.140.1O2.80.1 O3.20.1 Power smplifier applications11.00.21.40.11 2 3 Power dissipation PCM : 1 W Tamb=25 1.270.1 Collector current 15.3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO:-120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected t

2SB649/2SB649A(PNP)TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.5007.4002.9001.100Symbol Parameter Value Units7.8001.500VCBO Collector-Base Voltage -180 V 3.9003.0004.100VCEO Collector-Emitter Voltage 3

2SB649/2SB649A TO-126C Transistor (PNP)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -180 V 3.0007.8003.4008.200 1.800VCEO Collector-Emitter Voltage 2.2004.0402SB649 -120 V

2SB649/2SB649APNP Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126CABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol 2SB649 2SB649A UnitVCBO-180 VCollector-Emitter VoltageVCEO-120 -160 VCollector-Base VoltageVEBOEmitter-Base Voltage 6.0 VCollector Current IC-1.5 APD1.0 WPower DisspationTj+150 CJunction Temp

2SB649TA(BR3CA649TA) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SD669TA(BR3DA669TA)Complementary pair with 2SD669TA(BR3DA669TA). / Applications Low frequency power amplifier. / Equivalen

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A)Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin

RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter

RoHS RoHS 2SB649AM SeriesSEMICONDUCTORNell High Power ProductsBipolar General Purpose PNP Power Transistor-1.5A / -120V, -160V / 20W2.7 0.48.00.5+0.153.1- 0.11.1(B)32(C)(E)1TO-1260.82.290.5 2.290.5 0.55 1.2 APPLICATIONSCLow frequency power amplifier complementaryE C B Bpair with 2SD669AM/2SD669AM-APNPEAll dimensions in millimeter

2SB649(3CA649) 2SB649A(3CA649A) PNP /SILICON PNP TRANSISTOR :/Purpose: Low frequency power amplifier. : 2SD669(3DA669)/2SD669A(3DA669A) Features: Complementary pair with 2SD669(3DA669)/2SD669A(3DA669A). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -180 V CBO

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

isc Silicon PNP Power Transistor 2SB649DESCRIPTIONHigh Collector Current-I =-1.5ACHigh Collector-Emitter Breakdown Voltage-: V =-120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RA