2SB668 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB668
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de 2SB668
2SB668 Datasheet (PDF)
2sb668.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO
2sb668.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -0.5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapp
2sb669.pdf

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -70V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = -1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switchingapplic
Otros transistores... 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , 2SB656A , 2SB66 , C1815 , 2SB668A , 2SB669 , 2SB669A , 2SB66H , 2SB67 , 2SB670 , 2SB670A , 2SB671 .
History: CHUMH2GP | 2SD1273P



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