2SB668. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB668 datasheet

..1. Size:148K jmnic
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JMnic Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

..2. Size:184K inchange semiconductor
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INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -0.5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching app

9.1. Size:185K inchange semiconductor
2sb669.pdf pdf_icon

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -70V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = -1A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power amplifier and switching applic

Otros transistores... 2SB653A , 2SB654 , 2SB654A , 2SB655 , 2SB655A , 2SB656 , 2SB656A , 2SB66 , 2N2222 , 2SB668A , 2SB669 , 2SB669A , 2SB66H , 2SB67 , 2SB670 , 2SB670A , 2SB671 .