2SB673
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB673
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 6000
Paquete / Cubierta:
TO220
2SB673
Datasheet (PDF)
..1. Size:214K inchange semiconductor
2sb673.pdf 
isc Silicon PNP Darlington Power Transistor 2SB673DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -3AFE CCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD633Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSH
9.1. Size:149K jmnic
2sb676.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN DESCRIPTION1 Base Collector; connected to 2 mounting base 3
9.2. Size:106K inchange semiconductor
2sb679.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- : PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITV
9.3. Size:214K inchange semiconductor
2sb676.pdf
isc Silicon PNP Darlington Power Transistor 2SB676DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -3ACE(sat) CComplement to Type 2SD686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
9.4. Size:216K inchange semiconductor
2sb674.pdf
isc Silicon PNP Darlington Power Transistor 2SB674DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
9.5. Size:215K inchange semiconductor
2sb675.pdf
isc Silicon PNP Darlington Power Transistor 2SB675DESCRIPTIONHigh DC Current Gain: h = 2000(Min.) @I = 3.0AFE CLow Saturation Voltage: V = 1.5V(Max.)@ I = 3.0ACE(sat) CComplement to Type 2SD635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive applica
9.6. Size:213K inchange semiconductor
2sb677.pdf
isc Silicon PNP Darlington Power Transistor 2SB677DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications.
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
