2SB675 Todos los transistores

isc Silicon PNP Darlington Power Transistor 2SB675 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SD635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive applica

JMnic Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION With TO-220C package High DC Current Gain hFE=2000 @VCE=-2V, IC=-1A (Min.) DARLINGTON APPLICATIONS For switching applications Hammer drive, pulse motor drive applications Power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector; connected to 2 mounting base 3

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min.) Complement to Type 2SC1079 APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V

isc Silicon PNP Darlington Power Transistor 2SB676 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD686 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

isc Silicon PNP Darlington Power Transistor 2SB674 DESCRIPTION High DC Current Gain h = 2000(Min.) @I = 3.0A FE C Low Saturation Voltage V = 1.5V(Max.)@ I = 3.0A CE(sat) C Complement to Type 2SD634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive applica

isc Silicon PNP Darlington Power Transistor 2SB673 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -3A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.5V(Max)@ I = -3A CE(sat) C Complement to Type 2SD633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H

isc Silicon PNP Darlington Power Transistor 2SB677 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications.